drd 2980c 34 rectifier diode ds 6011 C 1 march 2011 (ln28198 ) 1 / 6 www.dynexsemi.com features ? double side cooling ? high surge capability voltage ratings part and ordering number repetitive peak voltages v rrm v conditions drd 2980c 34 drd 2980c 32 drd 2980c 30 drd 2980c 28 drd 2980c 26 drd 2980c 24 3 4 00 32 00 30 00 28 00 26 00 24 00 v rsm = v rrm +100v ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: d rd 2980c 3 4 for a 3 400 v device key parameters v rrm 3 4 00 v i f(av) 2980 a i fsm 36500 a outline type code: c (see package details for further information) fig. 1 package outline
drd 2980c 34 2 / 6 www.dynexsemi.com current ratings t case = 75c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 3590 a i f(rms) rms value - 5640 a i f continuous (direct) on - state current - 5080 a t case = 100c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 2980 a i f(rms) rms value - 4680 a i f continuous (direct) on - state current - 4210 a surge ratings symbol parameter test conditions max. units i fsm surge (non - repetitive) on - state current 10ms half sine, t case = 175 c 36.5 ka i 2 t i 2 t for fusing v r = 0 6.66 ma 2 s
- 3 - d rd 2980c 34 3 / 6 www.dynexsemi.com thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.01 25 c/w r th(c - h) thermal resistance C case to heatsink double side cooled dc - 0.00 4 c/w t vj virtual junction temperature blocking v drm / vrrm - 40 175 c t stg storage temperature range - 40 175 c f m clamping force 40 50 kn characteristics symbol parameter test conditions min. max. units v fm forward voltage at 30 00 a peak, t case = 25 c - 1. 3 5 v i rm peak reverse current at v drm, t case = 175 c - 2 50 ma q s total stored charge i f = 4 000a, di rr /dt = 10 a/s - 5 5 00 c t case = 175 c, v r =100v v to threshold voltage at t vj = 175 c - 0.8 2 v r t slope resistance at t vj = 175 c - 0.1 2 8 m ?
drd 2980c 34 4 / 6 www.dynexsemi.com curves fig.2 maximum forward characteristics fig.3 dissipation curves fig. 4 surge (non - repetitive) forward current vs time fig. 5 maximum (limit) transient thermal impedance - junction to case 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 0.6 0.8 1 1.2 1.4 1.6 1.8 2 instantaneous forward current, i f - (a) instantaneous forward voltage,v f - (v) t j =175 c 0 1000 2000 3000 4000 5000 6000 0 1000 2000 3000 4000 mean power dissipation - (w) mean on - state current, i t(av) - (a) 1/2 wave 3 phase 6 phase 4.0 9.0 14.0 19.0 24.0 29.0 34.0 39.0 1 10 100 surge current, itsm - (ka) number of cycles conditons: t case =175 c v r =0 pulse width = 10ms 0 0.005 0.01 0.015 0.001 0.01 0.1 1 10 100 thermal impedance zth(j - c) ( c/w ) time ( s ) double side cooled
- 5 - d rd 2980c 34 5 / 6 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. package outline type code: c note: some packages may be supplied with gate and or tags.
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